note: 1. *1 measurin g on substrate at 17 mm 10 mm 1 mm tr1,tr2 note: 1. measuring methods are based on japanese industrial standard jis c 7030 measuring methods for transistors. 2. *1 pulse measurement embossed t yp e ( thermo-com p ression sealin g) r s p ecification : 10 000 p cs / reel pin name vce = 10 v, ic = 5 ma ma 0.1 a internal connection unit v v ma max unit 10 v 4. emitter(tr2) k r2 input resistance r1 80 collector-emitter saturation voltage vce = 0.2 v, ic = 5 ma vi(off) forward current transfer ratio hfe packing resistance ratio r1/r2 0.25 - 50 0.17 10 0.2 -30% - v iebo veb = 6 v, ic = 0 0.21 +30% k 1.7 v 0.25 47 k base(tr2) 6. collector(tr1) 5. resistance value collector(tr2) 0.5 a v collector-emitter cutoff current (base open) iceo vce = 50 v, ib = 0 icbo vcb = 50 v, ie = 0 symbol conditions 50 min electrical characteristics ta = 25 c 3 c base(tr1) -55 typ 1. emitter(tr1) 3. r1 to parameter tr1 tr2 collector-base voltage (emitter open) vcbo vce = 5 v, ic = 100 a collector current ic 80 2. collector-base cutoff current (emitter open) collector-emitter voltage (base open) vi(on) collector-base voltage (emitter open) vcbo ic = 10 a, ie = 0 collector-emitter voltage (base open) *1 vceo ic = 2 ma, ib = 0 vce(sat) ic = 10 ma, ib = 0.5 ma emitter-base cutoff current (collector open) semiconductor company, panasonic corporation 2010.3.11 2010.9.28 prepared revised tentative DMC364A4 total pages page mw c c DMC364A4 silicon npn epitaxial planar type (tr1) for digital circuits marking symbol : j9 silicon npn epitaxial planar type (tr2) vceo 50 package code : sssmini6-f2-b storage temperature tstg absolute maximum ratings ta = 25 c symbol rating overall total power dissipation *1 pt parameter 0.5 input voltage 125 junction temperature tj 150 +150 50 3 4 5 6 2 1 tr 1 tr 2 r1 r1 r2 r2
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